Model Code (Capacity)1)
- MZ-V9P1T0BW (1TB)
- MZ-V9P2T0BW (2TB)
General Feature
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APPLICATION
Client PCs, Game Consoles
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FORM FACTOR
M.2 (2280)
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INTERFACE
PCIe Gen 4.0 x4, NVMe 2.0
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DIMENSION (WxHxD)
80 x 22 x 2.3 mm
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WEIGHT
Max 9.0g Weight
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STORAGE MEMORY
Samsung V-NAND 3-bit MLC
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CONTROLLER
Samsung in-house Controller
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CACHE MEMORY
Samsung 1GB Low Power DDR4 SDRAM (1TB)
Samsung 2GB Low Power DDR4 SDRAM(2TB)
Special Feature
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TRIM SUPPORT
Supported
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S.M.A.R.T SUPPORT
Supported
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GC (GARBAGE COLLECTION)
Auto Garbage Collection Algorithm
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ENCRYPTION SUPPORT
AES 256-bit Encryption (Class 0) TCG/Opal
IEEE1667 (Encrypted drive) -
WWN SUPPORT
Not supported
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DEVICE SLEEP MODE SUPPORT
Yes
Performance2)
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SEQUENTIAL READ
1TB: Up to 7,450 MB/s
2TB: Up to 7,450 MB/s -
SEQUENTIAL WRITE
1TB: Up to 6,900 MB/s
2TB: Up to 6,900 MB/s -
RANDOM READ (4KB, QD32)
1TB: Up to 1,200,000 IOPS
2TB: Up to 1,400,000 IOPS -
RANDOM WRITE (4KB, QD32)
1TB: Up to 1,550,000 IOPS
2TB: Up to 1,550,000 IOPS -
RANDOM READ (4KB, QD1)
1TB: Up to 22,000 IOPS
2TB: Up to 22,000 IOPS -
RANDOM WRITE (4KB, QD1)
1TB: Up to 80,000 IOPS
2TB: Up to 80,000 IOPS
Environment
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AVERAGE POWER CONSUMPTION
(SYSTEM LEVEL)3)1TB: Average 5.4 W Maximum 7.8 W (Burst mode)
2TB: Average 5.5 W Maximum 8.5 W (Burst mode) -
POWER CONSUMPTION (IDLE)3)
1TB: Max. 50 mW
2TB: Max. 55 mW -
POWER CONSUMPTION (DEVICE SLEEP)
1TB: Max. 5 mW
2TB: Max. 5 mW -
ALLOWABLE VOLTAGE
3.3 V ± 5 % Allowable voltage
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RELIABILITY (MTBF)
1.5 Million Hours Reliability (MTBF)
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OPERATING TEMPERATURE
0 – 70 ℃ Operating Temperature
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SHOCK
1,500 G & 0.5 ms (Half sine)
Accessories
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INSTALLATION KIT
Not Available
Software
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MANAGEMENT SW
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